SP8K1FU6TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Factory Lead Time :

40 Weeks

Rise Time :

8ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 5V

Turn On Delay Time :

6 ns

Turn-Off Delay Time :

22 ns

Radiation Hardening :

No

Max Power Dissipation :

2W

Mount :

Surface Mount

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

Fall Time (Typ) :

5 ns

Base Part Number :

*K1

Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

51m Ω @ 5A, 10V

ECCN Code :

EAR99

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

5A

Drain Current-Max (Abs) (ID) :

5A

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)