SP8K22FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Cut Tape (CT)

Number of Terminations :

8

Drain-source On Resistance-Max :

0.064Ohm

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 5V

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

46m Ω @ 4.5A, 10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 10V

Series :

Automotive, AEC-Q101

Published :

2016

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Factory Lead Time :

20 Weeks

JESD-30 Code :

R-PDSO-G8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

18A

Power - Max :

2W

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

45V

Drain Current-Max (Abs) (ID) :

4.5A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Standard

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

45V

Surface Mount :

yes

Operating Temperature :

150°C TJ