SIS892DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

3.7W

Drain-source On Resistance-Max :

0.029Ohm

Published :

2005

Mounting Type :

Surface Mount

Turn-Off Delay Time :

17 ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

5 mJ

Number of Pins :

8

Terminal Form :

C BEND

FET Type :

N-Channel

REACH SVHC :

Unknown

Power Dissipation-Max :

3.7W Ta 52W Tc

Rds On (Max) @ Id, Vgs :

29m Ω @ 10A, 10V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerPAK® 1212-8

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Pulsed Drain Current-Max (IDM) :

50A

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

21.5nC @ 10V

Series :

TrenchFET®

Lead Free :

Lead Free

Threshold Voltage :

3V

Turn On Delay Time :

10 ns

Pin Count :

8

Height :

1.12mm

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

S-XDSO-C5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

30A

Number of Channels :

1

Number of Terminations :

5

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

611pF @ 50V