SIS892ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.12mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Rds On (Max) @ Id, Vgs :

33m Ω @ 10A, 10V

Turn On Delay Time :

10 ns

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Package / Case :

PowerPAK® 1212-8

Gate Charge (Qg) (Max) @ Vgs :

19.5nC @ 10V

REACH SVHC :

Unknown

ECCN Code :

EAR99

JESD-30 Code :

S-PDSO-C5

Factory Lead Time :

14 Weeks

Avalanche Energy Rating (Eas) :

5 mJ

Number of Channels :

1

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Contact Plating :

Tin

Number of Elements :

1

Number of Terminations :

5

Vgs (Max) :

±20V

Length :

3.4mm

Threshold Voltage :

1.5V

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Max Junction Temperature (Tj) :

150°C

Width :

3.4mm

Resistance :

33mOhm

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Power Dissipation :

3.7W

Turn-Off Delay Time :

16 ns

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

40A

Continuous Drain Current (ID) :

7.4A

Terminal Form :

C BEND

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 50V

Power Dissipation-Max :

3.7W Ta 52W Tc

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Transistor Element Material :

SILICON

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V