SIS862DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

8.5mOhm @ 20A, 10V

Fall Time (Typ) :

5 ns

Mounting Type :

Surface Mount

Rise Time :

5ns

Series :

TrenchFET®

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Power Dissipation :

52W

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

23 ns

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Input Capacitance :

1.32nF

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Drain to Source Resistance :

7mOhm

Package / Case :

PowerPAK® 1212-8

Mount :

Surface Mount

Vgs (Max) :

±20V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

40A

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Supplier Device Package :

PowerPAK® 1212-8

Max Operating Temperature :

150°C

Threshold Voltage :

2.6V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 30V

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

Height :

1.12mm

Rds On Max :

8.5 mΩ

Lead Free :

Lead Free

Turn-Off Delay Time :

15 ns

Power Dissipation-Max :

3.7W Ta 52W Tc

Number of Channels :

1

Published :

2013