SIS890DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

30A

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

30A Tc

FET Type :

N-Channel

Transistor Application :

SWITCHING

Power Dissipation :

3.7W

Height :

1.17mm

Series :

TrenchFET®

Avalanche Energy Rating (Eas) :

5 mJ

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Resistance :

23.5mOhm

Length :

3.4mm

JESD-30 Code :

S-PDSO-C5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

9 ns

Continuous Drain Current (ID) :

8.8A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

802pF @ 50V

Max Junction Temperature (Tj) :

150°C

Packaging :

Digi-Reel®

ECCN Code :

EAR99

Turn-Off Delay Time :

16 ns

Width :

3.4mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Fall Time (Typ) :

8 ns

Terminal Form :

C BEND

Package / Case :

PowerPAK® 1212-8

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.7W Ta 52W Tc

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

REACH SVHC :

Unknown

Factory Lead Time :

14 Weeks

Published :

2013

Transistor Element Material :

SILICON

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

23.5m Ω @ 10A, 10V

Threshold Voltage :

1.5V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V