SIS888DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

Power Dissipation :

3.7W

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Rds On (Max) @ Id, Vgs :

58m Ω @ 10A, 10V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

FET Type :

N-Channel

Package / Case :

PowerPAK® 1212-8S

Number of Channels :

1

JESD-609 Code :

e3

Turn-Off Delay Time :

13 ns

Series :

ThunderFET®

Operating Temperature :

-55°C~150°C TA

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 75V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

Fall Time (Typ) :

8 ns

Mount :

Surface Mount

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.2V @ 250μA

Rise Time :

8ns

Continuous Drain Current (ID) :

5.3A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

52W Tc