SIS890ADN-T1-GE3
- Mfr.Part #
- SIS890ADN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK? 1212-8
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7.6A/24.7A PPAK
- Stock
- 795
- In Stock :
- 795
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Digi-Reel?
- Transistor Polarity :
- N-Channel
- Qualification :
- -
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Subcategory :
- MOSFETs
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A (Ta), 24.7A (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 29 nC @ 10 V
- Transistor Type :
- TrenchFET Power MOSFET
- Pin Count :
- 8
- Maximum Operating Temperature :
- + 150 C
- Tradename :
- TrenchFET
- Mounting Style :
- SMD/SMT
- RoHS :
- Details
- Base Product Number :
- SIS890
- Package Type :
- PowerPAK 1212-8
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 25.5mOhm @ 10A, 10V
- Continuous Drain Current Id :
- 24.7
- Manufacturer :
- Vishay
- Mounting Type :
- Surface Mount
- Power Dissipation (Max) :
- 3.6W (Ta), 39W (Tc)
- Channel Type :
- N
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- PowerPAK? 1212-8
- Package / Case :
- PowerPAK? 1212-8
- Number of Channels :
- 1 Channel
- Rise Time :
- 6 ns
- Series :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 1330 pF @ 50 V
- Number of Elements per Chip :
- 1
- FET Type :
- N-Channel
- Product Type :
- MOSFET
- Packaging :
- MouseReel
- Brand :
- Vishay / Siliconix
- Drain to Source Voltage (Vdss) :
- 100 V
- MSL :
- MSL 1 - Unlimited
- Product Category :
- MOSFET
- FET Feature :
- -
- Power Dissipation :
- 39
- Datasheets
- SIS890ADN-T1-GE3
N-Channel MouseReel 25.5mOhm @ 10A, 10V ±20V 1330 pF @ 50 V 29 nC @ 10 V 100 V PowerPAK? 1212-8
SIS890ADN-T1-GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1330 pF @ 50 V.This transistor requires a drain-source voltage (Vdss) of 100 V.
SIS890ADN-T1-GE3 Features
a 100 V drain to source voltage (Vdss)
SIS890ADN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIS890ADN-T1-GE3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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