SIS862ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET® Gen IV

Rds On (Max) @ Id, Vgs :

7.2mOhm @ 10A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1235pF @ 30V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

15.8A Ta 52A Tc

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Drain to Source Voltage (Vdss) :

60V

Supplier Device Package :

PowerPAK® 1212-8

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.6W Ta 39W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Package / Case :

PowerPAK® 1212-8