SIR882ADP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

8.7mOhm

Threshold Voltage :

1.2V

Number of Pins :

8

Weight :

506.605978mg

Element Configuration :

Single

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

PowerPAK® SO-8

Power Dissipation :

5.4W

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

5.4W Ta 83W Tc

Published :

2013

Number of Elements :

1

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

60A

Fall Time (Typ) :

9 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

8.7mOhm @ 20A, 10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

34 ns

Radiation Hardening :

No

Vgs (Max) :

±20V

FET Type :

N-Channel

Rds On Max :

8.7 mΩ

Turn On Delay Time :

11 ns

Package / Case :

PowerPAK® SO-8

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Input Capacitance :

1.975nF

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1975pF @ 50V

Number of Channels :

1

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Mount :

Surface Mount

REACH SVHC :

Unknown

Drain to Source Resistance :

7.2mOhm

Rise Time :

12ns

Min Operating Temperature :

-55°C