SIR800DP-T1-RE3
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- Mfr.Part #
- SIR800DP-T1-RE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 50A PPAK SO-8
- Stock
- 9,606
- In Stock ：
- 9,606
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 133nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±12V
- Power Dissipation-Max :
- 69W Tc
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 20V
- Series :
- TrenchFET® Gen III
- Factory Lead Time :
- 14 Weeks
- Supplier Device Package :
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5125pF @ 10V
- Rds On (Max) @ Id, Vgs :
- 2.3mOhm @ 15A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- PowerPAK® SO-8
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- Datasheets
- SIR800DP-T1-RE3
N-Channel Tape & Reel (TR) 2.3mOhm @ 15A, 10V ±12V 5125pF @ 10V 133nC @ 10V 20V PowerPAK® SO-8
SIR800DP-T1-RE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5125pF @ 10V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 10V).
SIR800DP-T1-RE3 Features
a 20V drain to source voltage (Vdss)
SIR800DP-T1-RE3 Applications
There are a lot of Vishay Siliconix
SIR800DP-T1-RE3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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