SIR804DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

7.2mOhm

REACH SVHC :

Unknown

Published :

2016

Rise Time :

9ns

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-XDSO-C5

Turn-Off Delay Time :

38 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

6.25W

Vgs(th) (Max) @ Id :

3V @ 250µA

Weight :

506.605978mg

Fall Time (Typ) :

11 ns

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 50V

Terminal Form :

C BEND

Package / Case :

PowerPAK® SO-8

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

100V

Nominal Vgs :

1.2 V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Transistor Application :

SWITCHING

Turn On Delay Time :

11 ns

Element Configuration :

Single

Number of Terminations :

5

Mounting Type :

Surface Mount

Terminal Position :

Dual

Number of Elements :

1

Number of Pins :

8

Power Dissipation-Max :

6.25W Ta 104W Tc

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 20A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Threshold Voltage :

1.2V

ECCN Code :

EAR99

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Continuous Drain Current (ID) :

60A

Lead Free :

Lead Free

Series :

TrenchFET®