SIR814DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

40V

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

60A

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 20A, 10V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 20V

Drain-source On Resistance-Max :

0.0029Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

DS Breakdown Voltage-Min :

40V

Terminal Form :

C BEND

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

ECCN Code :

EAR99

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs (Max) :

±20V

Package / Case :

PowerPAK® SO-8

Gate to Source Voltage (Vgs) :

20V

Published :

2011

Case Connection :

DRAIN

Power Dissipation-Max :

6.25W Ta 104W Tc

Threshold Voltage :

1V

Power Dissipation :

6.25W

Series :

TrenchFET®

JESD-30 Code :

R-PDSO-C5