SIR808DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-C5

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

50A

Turn-Off Delay Time :

14 ns

Weight :

506.605978mg

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

815pF @ 12.5V

Continuous Drain Current (ID) :

20A

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Avalanche Energy Rating (Eas) :

22 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 17A, 10V

Element Configuration :

Single

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Number of Pins :

8

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2015

Power Dissipation-Max :

29.8W Tc

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

20A Tc

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

22.8nC @ 10V

Fall Time (Typ) :

7 ns

Rise Time :

10ns

Number of Channels :

1

ECCN Code :

EAR99

REACH SVHC :

Unknown

Terminal Form :

C BEND

Pin Count :

8

Threshold Voltage :

1V

Turn On Delay Time :

5 ns

Package / Case :

PowerPAK® SO-8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3