SIR802DP-T1-GE3

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Mfr.Part #
SIR802DP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 20V 30A PPAK SO-8
Stock
5,558
In Stock :
5,558

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
5m Ω @ 10A, 10V
Threshold Voltage :
600mV
Fall Time (Typ) :
13 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
12V
Transistor Application :
SWITCHING
Factory Lead Time :
13 Weeks
Terminal Form :
C BEND
REACH SVHC :
Unknown
Number of Terminations :
5
Pin Count :
8
Turn On Delay Time :
19 ns
Continuous Drain Current (ID) :
30A
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
MATTE TIN
Mount :
Surface Mount
Rise Time :
14ns
Avalanche Energy Rating (Eas) :
20 mJ
Number of Elements :
1
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
30A Tc
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Power Dissipation :
4.6W
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
260
JESD-30 Code :
R-PDSO-C5
Weight :
506.605978mg
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
8
Package / Case :
PowerPAK® SO-8
Vgs (Max) :
±12V
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Terminal Position :
Dual
Case Connection :
DRAIN
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 10V
Number of Channels :
1
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
1785pF @ 10V
Pulsed Drain Current-Max (IDM) :
70A
Time@Peak Reflow Temperature-Max (s) :
40
Power Dissipation-Max :
4.6W Ta 27.7W Tc
FET Type :
N-Channel
Mounting Type :
Surface Mount
Published :
2010
Resistance :
5mOhm
Drain to Source Breakdown Voltage :
20V
Series :
TrenchFET®
Transistor Element Material :
SILICON
Turn-Off Delay Time :
36 ns
Lead Free :
Lead Free
Datasheets
SIR802DP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIR802DP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Number of Pins:8, Package / Case:PowerPAK® SO-8, Number of Channels:1, Mounting Type:Surface Mount, SIR802DP-T1-GE3 pinout, SIR802DP-T1-GE3 datasheet PDF, SIR802DP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIR802DP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIR802DP-T1-GE3


N-Channel Tape & Reel (TR) 5m Ω @ 10A, 10V ±12V 1785pF @ 10V 32nC @ 10V PowerPAK® SO-8

SIR802DP-T1-GE3 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 20 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1785pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [36 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 70A.A turn-on delay time of 19 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 600mV.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).

SIR802DP-T1-GE3 Features


the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 70A.
a threshold voltage of 600mV


SIR802DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIR802DP-T1-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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