SIR826DP-T1-RE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4.8mOhm @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 40V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Packaging :

Tape and Reel (TR)

Supplier Device Package :

PowerPAK® SO-8

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

80V

Power Dissipation-Max :

104W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

PowerPAK® SO-8

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.8V @ 250μA