SIR880DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Package / Case :

PowerPAK® SO-8

Number of Pins :

8

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 20A, 10V

Continuous Drain Current (ID) :

60A

Number of Channels :

2

Drain-source On Resistance-Max :

0.0067Ohm

Pin Count :

8

JESD-30 Code :

R-PDSO-C5

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

80V

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

2440pF @ 40V

Transistor Element Material :

SILICON

Nominal Vgs :

1.2 V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Weight :

506.605978mg

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

Threshold Voltage :

1.2V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Element Configuration :

Dual

Radiation Hardening :

No

Mount :

Surface Mount

FET Type :

N-Channel

Number of Elements :

1

Published :

2005

Power Dissipation :

6.25W

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

6.25W Ta 104W Tc

Factory Lead Time :

14 Weeks

Terminal Form :

C BEND

Vgs (Max) :

±20V

REACH SVHC :

Unknown