SIR878DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Pbfree Code :

yes

FET Type :

N-Channel

Published :

2015

Power Dissipation-Max :

5W Ta 44.5W Tc

Number of Channels :

1

Weight :

506.605978mg

Terminal Form :

C BEND

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Drain to Source Breakdown Voltage :

100V

Series :

TrenchFET®

Package / Case :

PowerPAK® SO-8

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Vgs (Max) :

±20V

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

20 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Mounting Type :

Surface Mount

Element Configuration :

Single

Threshold Voltage :

1.2V

Continuous Drain Current (ID) :

40A

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

14m Ω @ 15A, 10V

Power Dissipation :

5W

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-C5

Radiation Hardening :

No

Number of Elements :

1