SIR873DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Power Dissipation-Max :

104W Tc

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Turn-Off Delay Time :

28 ns

Drain to Source Breakdown Voltage :

-150V

Manufacturer Package Identifier :

S17-0173_SINGLE

Terminal Position :

Dual

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

37A

Terminal Form :

Flat

Transistor Element Material :

SILICON

Turn On Delay Time :

15 ns

Continuous Drain Current (ID) :

-9A

Drain to Source Voltage (Vdss) :

150V

Height :

1.12mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1805pF @ 75V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

50A

Power Dissipation :

6.25W

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

14 Weeks

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

47.5m Ω @ 10A, 10V

Series :

TrenchFET® Gen IV

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Avalanche Energy Rating (Eas) :

80 mJ

JESD-30 Code :

R-PDSO-F5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0475Ohm

Package / Case :

PowerPAK® SO-8