SIR872DP-T1-GE3
- Mfr.Part #
- SIR872DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 53.7A PPAK SO-8
- Stock
- 11,780
- In Stock :
- 11,780
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Drain to Source Voltage (Vdss) :
- 150V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Series :
- TrenchFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 6.25W Ta 104W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 53.7A Tc
- Lead Free :
- Lead Free
- Factory Lead Time :
- 14 Weeks
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Contact Plating :
- Tin
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-F5
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Threshold Voltage :
- 1.5V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 2130pF @ 75V
- Published :
- 2013
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 53.7A
- ECCN Code :
- EAR99
- REACH SVHC :
- Unknown
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Number of Terminations :
- 5
- Package / Case :
- PowerPAK® SO-8
- Power Dissipation :
- 6.25W
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 20A, 10V
- Datasheets
- SIR872DP-T1-GE3
N-Channel Tape & Reel (TR) 18m Ω @ 20A, 10V ±20V 2130pF @ 75V 64nC @ 10V 150V PowerPAK® SO-8
SIR872DP-T1-GE3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2130pF @ 75V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 53.7A continuous drain current (ID).An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.5V, which means that it will not activate any of its functions when its threshold voltage reaches 1.5V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
SIR872DP-T1-GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 53.7A
a threshold voltage of 1.5V
a 150V drain to source voltage (Vdss)
SIR872DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR872DP-T1-GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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