SIR872DP-T1-GE3

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Mfr.Part #
SIR872DP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 150V 53.7A PPAK SO-8
Stock
11,780
In Stock :
11,780

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
45 mJ
Drain to Source Voltage (Vdss) :
150V
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
64nC @ 10V
Series :
TrenchFET®
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
6.25W Ta 104W Tc
Current - Continuous Drain (Id) @ 25°C :
53.7A Tc
Lead Free :
Lead Free
Factory Lead Time :
14 Weeks
FET Type :
N-Channel
Vgs (Max) :
±20V
Contact Plating :
Tin
Number of Pins :
8
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Mount :
Surface Mount
JESD-30 Code :
R-PDSO-F5
Radiation Hardening :
No
Terminal Form :
Flat
Threshold Voltage :
1.5V
Number of Elements :
1
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
2130pF @ 75V
Published :
2013
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
53.7A
ECCN Code :
EAR99
REACH SVHC :
Unknown
Case Connection :
DRAIN
Packaging :
Tape and Reel (TR)
Terminal Position :
Dual
Number of Terminations :
5
Package / Case :
PowerPAK® SO-8
Power Dissipation :
6.25W
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
18m Ω @ 20A, 10V
Datasheets
SIR872DP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIR872DP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:5, Package / Case:PowerPAK® SO-8, Operating Temperature:-55°C~150°C TJ, SIR872DP-T1-GE3 pinout, SIR872DP-T1-GE3 datasheet PDF, SIR872DP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIR872DP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIR872DP-T1-GE3


N-Channel Tape & Reel (TR) 18m Ω @ 20A, 10V ±20V 2130pF @ 75V 64nC @ 10V 150V PowerPAK® SO-8

SIR872DP-T1-GE3 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2130pF @ 75V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 53.7A continuous drain current (ID).An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.5V, which means that it will not activate any of its functions when its threshold voltage reaches 1.5V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

SIR872DP-T1-GE3 Features


the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 53.7A
a threshold voltage of 1.5V
a 150V drain to source voltage (Vdss)


SIR872DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIR872DP-T1-GE3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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