SIR871DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

JESD-30 Code :

R-PDSO-F5

Reach Compliance Code :

Unknown

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

20m Ω @ 20A, 10V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

300A

Number of Elements :

1

Package / Case :

PowerPAK® SO-8

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

48A Tc

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

61 mJ

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

3395pF @ 50V

Terminal Form :

Flat

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

48A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.02Ohm

Power Dissipation-Max :

89W Tc