SIR866DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Radiation Hardening :

No

Number of Elements :

1

Fall Time (Typ) :

49 ns

Mounting Type :

Surface Mount

Mount :

Surface Mount

Series :

TrenchFET®

Height :

1.04mm

Power Dissipation-Max :

5.4W Ta 83W Tc

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4730pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

JESD-30 Code :

R-XDSO-C5

Turn On Delay Time :

42 ns

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Number of Pins :

8

Turn-Off Delay Time :

66 ns

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Terminal Form :

C BEND

Width :

5.89mm

Continuous Drain Current (ID) :

60A

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Factory Lead Time :

13 Weeks

Length :

4.9mm

REACH SVHC :

Unknown

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Number of Terminations :

5

Resistance :

1.9mOhm

Power Dissipation :

5.4W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2015

Rise Time :

23ns

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

20V

Vgs (Max) :

±20V

Weight :

506.605978mg

Time@Peak Reflow Temperature-Max (s) :

40

Threshold Voltage :

2.3V

Terminal Finish :

Matte Tin (Sn)

Package / Case :

PowerPAK® SO-8

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

39A