SIR862DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Pin Count :

8

Continuous Drain Current (ID) :

32A

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Rise Time :

16ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

50A

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Package / Case :

PowerPAK® SO-8

Series :

TrenchFET®

Number of Elements :

1

Power Dissipation-Max :

5.2W Ta 69W Tc

Fall Time (Typ) :

17 ns

Turn On Delay Time :

28 ns

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 15A, 10V

Vgs (Max) :

±20V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 10V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

39 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

C BEND

Weight :

506.605978mg

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

DS Breakdown Voltage-Min :

25V

Number of Terminations :

5

JESD-30 Code :

R-XDSO-C5

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

70A

Packaging :

Tape and Reel (TR)