SIR850DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Width :

5.89mm

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1120pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Turn-Off Delay Time :

30 ns

Element Configuration :

Single

Rise Time :

20ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

JESD-30 Code :

R-XDSO-C5

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerPAK® SO-8

Continuous Drain Current (ID) :

30A

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

70A

Weight :

506.605978mg

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Fall Time (Typ) :

11 ns

Length :

4.9mm

Number of Channels :

1

ECCN Code :

EAR99

Power Dissipation :

4.8W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

4.8W Ta 41.7W Tc

REACH SVHC :

Unknown

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

25 Weeks

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Published :

2014

Number of Terminations :

5

Threshold Voltage :

3V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Height :

1.04mm

Vgs (Max) :

±20V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

7m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

25V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.007Ohm

Number of Pins :

8

Mount :

Surface Mount

Terminal Form :

C BEND

Turn On Delay Time :

20 ns

FET Type :

N-Channel