SIR846DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Rise Time :

18ns

Terminal Form :

C BEND

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 20A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

20A

Case Connection :

DRAIN

Terminal Position :

Dual

Turn On Delay Time :

18 ns

Resistance :

7.8mOhm

Vgs (Max) :

±20V

Threshold Voltage :

1.5V

Continuous Drain Current (ID) :

60A

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Power Dissipation :

6.25W

Pin Count :

8

Series :

TrenchFET®

Weight :

506.605978mg

Factory Lead Time :

14 Weeks

Nominal Vgs :

3.5 V

JESD-30 Code :

R-XDSO-C5

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Number of Channels :

1

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

100V

Package / Case :

PowerPAK® SO-8

Published :

2009

REACH SVHC :

Unknown

Element Configuration :

Single

Number of Terminations :

5

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

20 ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

36 ns

Power Dissipation-Max :

6.25W Ta 104W Tc

Mount :

Surface Mount

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

2870pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)