SIR846ADP-T1-GE3
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- Mfr.Part #
- SIR846ADP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A PPAK SO-8
- Stock
- 7,932
- In Stock ：
- 7,932
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 1.8V
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Terminal Form :
- C BEND
- Length :
- 6.25mm
- Resistance :
- 9.5MOhm
- Radiation Hardening :
- No
- Turn On Delay Time :
- 14 ns
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-C5
- Number of Terminations :
- 5
- REACH SVHC :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 200A
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- TrenchFET®
- Width :
- 5.26mm
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 5.4W
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Continuous Drain Current (ID) :
- 60A
- Package / Case :
- PowerPAK® SO-8
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Weight :
- 506.605978mg
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 5.4W Ta 83W Tc
- Drain to Source Breakdown Voltage :
- 100V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 7.8m Ω @ 20A, 10V
- ECCN Code :
- EAR99
- Published :
- 2013
- Height :
- 1.12mm
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2350pF @ 50V
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 14 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 28 ns
- Datasheets
- SIR846ADP-T1-GE3
N-Channel Tape & Reel (TR) 7.8m Ω @ 20A, 10V ±20V 2350pF @ 50V 66nC @ 10V PowerPAK® SO-8
SIR846ADP-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2350pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [28 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 200A.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.8V.A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
SIR846ADP-T1-GE3 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 200A.
a threshold voltage of 1.8V
SIR846ADP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR846ADP-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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