SIR844DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Rise Time :

21ns

FET Type :

N-Channel

Number of Elements :

1

Drain-source On Resistance-Max :

0.0028Ohm

Terminal Form :

C BEND

Avalanche Energy Rating (Eas) :

80 mJ

Continuous Drain Current (ID) :

50A

Factory Lead Time :

21 Weeks

Number of Terminations :

5

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

39 ns

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Case Connection :

DRAIN

Power Dissipation-Max :

5W Ta 50W Tc

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

50A Tc

ECCN Code :

EAR99

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3215pF @ 10V

Drain Current-Max (Abs) (ID) :

30A

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

23 ns

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

JESD-30 Code :

R-XDSO-C5

Published :

2009

Pbfree Code :

yes

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 15A, 10V

Drain to Source Breakdown Voltage :

25V

Pulsed Drain Current-Max (IDM) :

70A

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Package / Case :

PowerPAK® SO-8

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

18 ns

Configuration :

SINGLE WITH BUILT-IN DIODE