SI4808DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Resistance :

22mOhm

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Published :

2014

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Number of Pins :

8

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

6 Weeks

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Number of Terminations :

8

Series :

LITTLE FOOT®

RoHS Status :

ROHS3 Compliant

Terminal Finish :

PURE MATTE TIN

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Max Power Dissipation :

1.1W

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Pin Count :

8

Drain to Source Breakdown Voltage :

30V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

5.7A

Qualification Status :

Not Qualified

Mount :

Surface Mount

Power Dissipation :

2W