SI4812BDY-T1-E3
- Mfr.Part #
- SI4812BDY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 7.3A 8SO
- Stock
- 21,415
- In Stock :
- 21,415
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 7.3A
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 8
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 15 ns
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Resistance :
- 16mOhm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A Ta
- REACH SVHC :
- Unknown
- Published :
- 2011
- Factory Lead Time :
- 15 Weeks
- Continuous Drain Current (ID) :
- 9.5A
- Operating Temperature :
- -55°C~150°C TJ
- Threshold Voltage :
- 3V
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 13 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 5V
- Rise Time :
- 13ns
- Width :
- 4mm
- Length :
- 5mm
- Series :
- LITTLE FOOT®
- Number of Channels :
- 1
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 8
- Power Dissipation-Max :
- 1.4W Ta
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 186.993455mg
- Turn-Off Delay Time :
- 20 ns
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Power Dissipation :
- 1.4W
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 9.5A, 10V
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Nominal Vgs :
- 3 V
- Height :
- 1.55mm
- Number of Elements :
- 1
- Datasheets
- SI4812BDY-T1-E3

N-Channel Tape & Reel (TR) 16m Ω @ 9.5A, 10V ±20V 13nC @ 5V 8-SOIC (0.154, 3.90mm Width)
SI4812BDY-T1-E3 Overview
This device's continuous drain current (ID) is 9.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7.3A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI4812BDY-T1-E3 Features
a continuous drain current (ID) of 9.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20 ns
a threshold voltage of 3V
SI4812BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4812BDY-T1-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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