SI4816BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Weight :

186.993455mg

Published :

2005

Width :

4mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

1.25W

Continuous Drain Current (ID) :

5.8A

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

3 V

Turn-Off Delay Time :

31 ns

Threshold Voltage :

1V

Max Junction Temperature (Tj) :

150°C

Resistance :

18.5mOhm

Terminal Form :

Gull wing

Rise Time :

9ns

Number of Terminations :

8

Factory Lead Time :

14 Weeks

Height :

1.75mm

Time@Peak Reflow Temperature-Max (s) :

40

Power - Max :

1W 1.25W

Lead Free :

Lead Free

Number of Channels :

2

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Half Bridge)

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Series :

LITTLE FOOT®

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Fall Time (Typ) :

9 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

18.5m Ω @ 6.8A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Turn On Delay Time :

13 ns

Mount :

Surface Mount

Base Part Number :

SI4816

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 5V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5.8A 8.2A

Length :

5mm

Transistor Element Material :

SILICON

Number of Pins :

8

Terminal Position :

Dual