SI4808DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Published :

2005

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

800mV @ 250µA (Min)

Rise Time :

10ns

Width :

4mm

Fall Time (Typ) :

10 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Mounting Type :

Surface Mount

Max Power Dissipation :

1.1W

Number of Elements :

2

Height :

1.55mm

Number of Pins :

8

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

8 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Power Dissipation :

2W

Number of Channels :

2

Length :

5mm

Factory Lead Time :

13 Weeks

JESD-609 Code :

e3

Weight :

506.605978mg

DS Breakdown Voltage-Min :

30V

Series :

LITTLE FOOT®

Turn-Off Delay Time :

21 ns

Continuous Drain Current (ID) :

5.7A

Terminal Form :

Gull wing

Radiation Hardening :

No