SI4226DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

2W

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 7A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Length :

5mm

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

30 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

4mm

Fall Time (Typ) :

8 ns

Height :

1.55mm

Drain to Source Breakdown Voltage :

25V

Transistor Element Material :

SILICON

Element Configuration :

Dual

Base Part Number :

SI4226

Radiation Hardening :

No

Continuous Drain Current (ID) :

7.5A

Gate to Source Voltage (Vgs) :

12V

Max Power Dissipation :

3.2W

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Mounting Type :

Surface Mount

Series :

TrenchFET®

Weight :

186.993455mg

Pin Count :

8

Rise Time :

10ns

FET Type :

2 N-Channel (Dual)

Published :

2009

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0195ohm

ECCN Code :

EAR99

Turn On Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE