SI4202DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

2.4W

Mount :

Surface Mount

Continuous Drain Current (ID) :

12.1A

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 15V

Current :

75A

Operating Temperature :

-55°C~150°C TJ

Power - Max :

3.7W

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Supplier Device Package :

8-SO

Max Power Dissipation :

3.7W

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Number of Elements :

2

Weight :

506.605978mg

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Fall Time (Typ) :

8 ns

Input Capacitance :

710pF

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual)

Resistance :

14mOhm

Rds On Max :

14 mΩ

Drain to Source Resistance :

17mOhm

Threshold Voltage :

1V

Gate to Source Voltage (Vgs) :

20V

Published :

2017

Rds On (Max) @ Id, Vgs :

14mOhm @ 8A, 10V

REACH SVHC :

No SVHC

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

12.1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Element Configuration :

Dual

Voltage :

30V

Number of Channels :

2

Series :

TrenchFET®

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Min Operating Temperature :

-55°C