SI4200DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

16V

Weight :

506.605978mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Power - Max :

2.8W

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Element Configuration :

Dual

Number of Channels :

2

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Number of Pins :

8

Radiation Hardening :

No

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

415pF @ 13V

Drain to Source Breakdown Voltage :

25V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

8A

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

25m Ω @ 7.3A, 10V

Drain Current-Max (Abs) (ID) :

8A

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

8 ns

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Terminal Finish :

PURE MATTE TIN

Number of Elements :

2

Published :

2016

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Max Power Dissipation :

2W

Continuous Drain Current (ID) :

7.3A

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

10ns

Factory Lead Time :

13 Weeks

Mount :

Surface Mount