SI4214DDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

12 ns

Resistance :

19.5MOhm

Turn On Delay Time :

7 ns

Transistor Element Material :

SILICON

Width :

4mm

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 8A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation :

2W

Terminal Finish :

PURE MATTE TIN

Radiation Hardening :

No

Pbfree Code :

yes

Turn-Off Delay Time :

15 ns

Mount :

Surface Mount

Series :

TrenchFET®

FET Feature :

Logic Level Gate

Max Power Dissipation :

3.1W

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

7.5A

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Threshold Voltage :

2.5V

Packaging :

Tape and Reel (TR)

Rise Time :

45ns

Height :

1.75mm

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

JESD-609 Code :

e3

Factory Lead Time :

14 Weeks

Mounting Type :

Surface Mount

Weight :

506.605978mg

FET Type :

2 N-Channel (Dual)

Published :

2016

Length :

5mm

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Number of Terminations :

8

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

8.5A

Number of Elements :

2

Max Junction Temperature (Tj) :

150°C

Element Configuration :

Dual