SI3993DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

3V @ 250µA

Weight :

19.986414mg

Current - Continuous Drain (Id) @ 25°C :

1.8A

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

-2.2A

Turn On Delay Time :

10 ns

Factory Lead Time :

12 Weeks

Nominal Vgs :

-3 V

FET Type :

2 P-Channel (Dual)

Turn-Off Delay Time :

17 ns

Max Power Dissipation :

830mW

Element Configuration :

Dual

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Pbfree Code :

yes

Resistance :

133mOhm

Height :

1mm

REACH SVHC :

Unknown

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Lead Free :

Lead Free

Terminal Form :

Gull wing

Width :

1.65mm

Transistor Element Material :

SILICON

Fall Time (Typ) :

16 ns

Gate to Source Voltage (Vgs) :

20V

Rise Time :

16ns

Length :

3.05mm

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Power Dissipation :

830mW

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Tin

Mount :

Surface Mount

Mounting Type :

Surface Mount

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Elements :

2

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

133m Ω @ 2.2A, 10V

Base Part Number :

SI3993

Series :

TrenchFET®

Drain Current-Max (Abs) (ID) :

1.8A

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260