SI3993CDV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Mount :

Surface Mount

Number of Elements :

2

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

-1.2V

Weight :

19.986414mg

Published :

2012

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Number of Terminations :

6

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

MO-193AA

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Standard

Current - Continuous Drain (Id) @ 25°C :

2.9A

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-30V

Pin Count :

6

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

111m Ω @ 2.5A, 10V

Fall Time (Typ) :

12 ns

Rise Time :

16ns

Continuous Drain Current (ID) :

-2.9A

Drain-source On Resistance-Max :

0.111Ohm

Contact Plating :

Tin

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Channels :

2

Transistor Application :

SWITCHING

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 15V

Power Dissipation :

1.14W

Drain to Source Voltage (Vdss) :

30V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mounting Type :

Surface Mount

Nominal Vgs :

-1.2 V

REACH SVHC :

No SVHC

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

2 P-Channel (Dual)

Turn-Off Delay Time :

17 ns

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Max Power Dissipation :

1.4W