RSS075P03FU6TB
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- Mfr.Part #
- RSS075P03FU6TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 7.5A 8SOP
- Stock
- 1,952
- In Stock ：
- 1,952
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 10V
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Drain to Source Breakdown Voltage :
- -30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Vgs (Max) :
- ±20V
- Rds On Max :
- 21 mΩ
- Turn-Off Delay Time :
- 85 ns
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 5V
- Rise Time :
- 35ns
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A Ta
- Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- -30V
- Fall Time (Typ) :
- 90 ns
- Threshold Voltage :
- -2.5V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 21mOhm @ 7.5A, 10V
- FET Type :
- P-Channel
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 30V
- Turn On Delay Time :
- 20 ns
- Lead Free :
- Lead Free
- Input Capacitance :
- 2.9nF
- Number of Pins :
- 8
- Drain to Source Resistance :
- 21mOhm
- Power Dissipation-Max :
- 2W Ta
- Supplier Device Package :
- 8-SOP
- Operating Temperature :
- 150°C TJ
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Continuous Drain Current (ID) :
- 7.5A
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2004
- Nominal Vgs :
- -2.5 V
- REACH SVHC :
- No SVHC
- Datasheets
- RSS075P03FU6TB
P-Channel Tape & Reel (TR) 21mOhm @ 7.5A, 10V ±20V 2900pF @ 10V 30nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
RSS075P03FU6TB Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2900pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -30V.As a result of its turn-off delay time, which is 85 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 21mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -2.5V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
RSS075P03FU6TB Features
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 85 ns
single MOSFETs transistor is 21mOhm
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
RSS075P03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS075P03FU6TB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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