RSS065N06FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G8

Pulsed Drain Current-Max (IDM) :

26A

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

2W Ta

Drain-source On Resistance-Max :

0.048Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Series :

Automotive, AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Factory Lead Time :

20 Weeks

Rds On (Max) @ Id, Vgs :

37m Ω @ 6.5A, 10V

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

6.5A

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2016

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Operating Temperature :

150°C TJ

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)