RSS065N03FU6TB
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- Mfr.Part #
- RSS065N03FU6TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.5A 8SOP
- Stock
- 4,425
- In Stock ：
- 4,425
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Threshold Voltage :
- 2.5V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Published :
- 2004
- Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Nominal Vgs :
- 2.5 V
- Number of Pins :
- 8
- Operating Temperature :
- 150°C TJ
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 30V
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 6.1nC @ 5V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2W Ta
- Continuous Drain Current (ID) :
- 6.5A
- Resistance :
- 27mOhm
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 6.5A, 10V
- Termination :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 430pF @ 10V
- Turn-Off Delay Time :
- 31 ns
- Turn On Delay Time :
- 8 ns
- Dual Supply Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 8ns
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 8 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Datasheets
- RSS065N03FU6TB
N-Channel Tape & Reel (TR) 26m Ω @ 6.5A, 10V ±20V 430pF @ 10V 6.1nC @ 5V 8-SOIC (0.154, 3.90mm Width)
RSS065N03FU6TB Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 430pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 31 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
RSS065N03FU6TB Features
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 31 ns
a threshold voltage of 2.5V
RSS065N03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS065N03FU6TB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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