RSS065N03TB
- Mfr.Part #
- RSS065N03TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.5A 8SOP
- Stock
- 162,186
- In Stock :
- 162,186
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 6.5A
- Turn On Delay Time :
- 8 ns
- Rise Time :
- 8ns
- Pin Count :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 2W Ta
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- Terminal Position :
- Dual
- JESD-609 Code :
- e2
- Number of Pins :
- 8
- Power Dissipation :
- 2W
- Number of Terminations :
- 8
- Fall Time (Typ) :
- 8 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 6.1nC @ 5V
- Pulsed Drain Current-Max (IDM) :
- 26A
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Current Rating :
- 6.5A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 6.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 40 Weeks
- Drain-source On Resistance-Max :
- 0.042Ohm
- Voltage - Rated DC :
- 30V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Finish :
- TIN COPPER
- Published :
- 2004
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 31 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 430pF @ 10V
- Datasheets
- RSS065N03TB

N-Channel Tape & Reel (TR) 26m Ω @ 6.5A, 10V ±20V 430pF @ 10V 6.1nC @ 5V 8-SOIC (0.154, 3.90mm Width)
RSS065N03TB Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 430pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 31 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 26A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
RSS065N03TB Features
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 26A.
RSS065N03TB Applications
There are a lot of ROHM Semiconductor
RSS065N03TB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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