RSS050P03TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

35 ns

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

10

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Current Rating :

-5A

ECCN Code :

EAR99

Transistor Application :

SWITCHING

JESD-609 Code :

e2

Drain Current-Max (Abs) (ID) :

5A

Rds On (Max) @ Id, Vgs :

42m Ω @ 5A, 10V

Pulsed Drain Current-Max (IDM) :

20A

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

12 ns

Turn-Off Delay Time :

70 ns

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

5A

Pbfree Code :

yes

Rise Time :

25ns

Mounting Type :

Surface Mount

Mount :

Surface Mount

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.042Ohm

Voltage - Rated DC :

-30V

Number of Elements :

1

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Power Dissipation-Max :

2W Ta

Published :

2004

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Terminal Finish :

TIN COPPER

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V