RSD175N10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

35A

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

17.5A Ta

Pin Count :

3

Number of Terminations :

2

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.119Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

FET Type :

N-Channel

Terminal Finish :

Tin/Copper (Sn98Cu2)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

JESD-609 Code :

e2

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

Factory Lead Time :

10 Weeks

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

20W Tc

Rds On (Max) @ Id, Vgs :

105m Ω @ 8.8A, 10V

Mount :

Surface Mount

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

17.5A

Published :

2011