RSD140P06TL
- Mfr.Part #
- RSD140P06TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 14A CPT3
- Stock
- 133,649
- In Stock :
- 133,649
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 110 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 20 ns
- JESD-609 Code :
- e2
- Number of Pins :
- 3
- Number of Terminations :
- 2
- FET Type :
- P-Channel
- Factory Lead Time :
- 10 Weeks
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 10V
- Packaging :
- Tape and Reel (TR)
- Max Junction Temperature (Tj) :
- 150°C
- Published :
- 2011
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 20W Tc
- Rds On (Max) @ Id, Vgs :
- 84m Ω @ 14A, 10V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 28A
- Turn-Off Delay Time :
- 240 ns
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Power Dissipation :
- 20W
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 14A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Drain to Source Breakdown Voltage :
- -60V
- Operating Temperature :
- 150°C TJ
- Height :
- 2.65mm
- Mounting Type :
- Surface Mount
- Rise Time :
- 45ns
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Datasheets
- RSD140P06TL

P-Channel Tape & Reel (TR) 84m Ω @ 14A, 10V ±20V 1900pF @ 10V 27nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
RSD140P06TL Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -60V.As a result of its turn-off delay time, which is 240 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 28A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
RSD140P06TL Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 240 ns
based on its rated peak drain current 28A.
a 60V drain to source voltage (Vdss)
RSD140P06TL Applications
There are a lot of ROHM Semiconductor
RSD140P06TL applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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