RSD131P10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

60 ns

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

200m Ω @ 6.5A, 10V

Terminal Position :

Single

Turn On Delay Time :

20 ns

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

850mW Ta 20W Tc

Mounting Type :

Surface Mount

Turn-Off Delay Time :

70 ns

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Rise Time :

25ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

13A

Terminal Finish :

Tin/Copper (Sn98Cu2)

Mount :

Surface Mount

Terminal Form :

Gull wing

Published :

2013

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Factory Lead Time :

10 Weeks

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e2