RSD150N06TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

45 ns

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

10

Number of Pins :

3

Continuous Drain Current (ID) :

15A

Fall Time (Typ) :

15 ns

Number of Elements :

1

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Pin Count :

3

Radiation Hardening :

No

Terminal Form :

Gull wing

Pbfree Code :

yes

Terminal Finish :

Tin/Copper (Sn98Cu2)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

20W Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Factory Lead Time :

10 Weeks

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Rise Time :

30ns

Rds On (Max) @ Id, Vgs :

40m Ω @ 15A, 10V

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Number of Channels :

1

JESD-609 Code :

e2

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

3V @ 1mA

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

10 ns

DS Breakdown Voltage-Min :

60V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 10V

Operating Mode :

ENHANCEMENT MODE