RSD100N10TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

ECCN Code :

EAR99

Element Configuration :

Single

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

20A

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

FET Type :

N-Channel

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

133m Ω @ 5A, 10V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

10A

Turn On Delay Time :

10 ns

Number of Elements :

1

Factory Lead Time :

10 Weeks

Published :

2011

Fall Time (Typ) :

20 ns

Power Dissipation-Max :

20W Tc

Number of Pins :

3

Number of Channels :

1

Terminal Form :

Gull wing

Turn-Off Delay Time :

50 ns

Rise Time :

17ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Vgs (Max) :

±20V

Terminal Finish :

Tin/Copper (Sn98Cu2)