RSD080N06TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Terminations :

2

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Operating Temperature :

150°C TJ

Rise Time :

13ns

Turn On Delay Time :

9 ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Vgs (Max) :

±20V

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 10V

DS Breakdown Voltage-Min :

60V

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

60V

Drain Current-Max (Abs) (ID) :

8A

Factory Lead Time :

10 Weeks

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

8A

Rds On (Max) @ Id, Vgs :

80m Ω @ 8A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

30 ns

Pulsed Drain Current-Max (IDM) :

16A

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Power Dissipation-Max :

15W Tc

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.109Ohm

Transistor Element Material :

SILICON