RSD046P05TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

DS Breakdown Voltage-Min :

45V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

155m Ω @ 4.5A, 10V

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.26Ohm

Vgs(th) (Max) @ Id :

3V @ 1mA

Terminal Finish :

Tin/Copper (Sn98Cu2)

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

4.5A

Power Dissipation-Max :

850mW Ta 15W Tc

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 10V

Drain to Source Voltage (Vdss) :

45V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

JESD-609 Code :

e2