RSD080P05TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

JESD-609 Code :

e2

Factory Lead Time :

10 Weeks

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

20V

FET Type :

P-Channel

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

91m Ω @ 8A, 10V

Lead Free :

Lead Free

Published :

2011

Fall Time (Typ) :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

11000pF @ 10V

Turn-Off Delay Time :

50 ns

Number of Channels :

1

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

45V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Rise Time :

15ns

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

45V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Gate Charge (Qg) (Max) @ Vgs :

93.4nC @ 5V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Number of Pins :

3

Continuous Drain Current (ID) :

8A

Drain Current-Max (Abs) (ID) :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Finish :

Tin/Copper (Sn98Cu2)

Power Dissipation-Max :

15W Tc

Operating Temperature :

150°C TJ

Number of Elements :

1

Vgs (Max) :

±20V